The advent of functional devices based on two-dimensional (2D) materials has further intensified the interest in the latter. However, the fabrication of structures using layered materials remains a key challenge. Recently, we proposed the so-called “Laser-Induced Transfer” method (LIT), as a digital and solvent-free approach for the high-resolution and intact transfer of 2D materials’ pixels. Here, we will further highlight the versatility of LIT by reporting results on the high-quality digital transfer of graphene and MoS2. These materials have emerged in the field of nanoelectronics, sensors and photonics due to their unique optoelectronic properties, but their high-quality transfer remains a hurdle. The quality of the transferred films has been confirmed with systematic characterization based on Scanning Electron Microscopy and Raman spectroscopy, as well as mobility’s extraction. Then we will present how the laser induced transfer of these materials can be employed as a key-enabler for the demonstration of the digital deposition of graphene and MoS2 pixels with form factors and electronic properties suitable for FETs. The presented results highlight the potential of LIT for the wafer scale integration of 2D materials, therefore fostering the wider industrial incorporation of 2D materials in electronics, optoelectronics and photonics.
In the current work we will present the transfer of graphene pixels and arrays. The process we used to accomplish the transfer was the Laser Induced Transfer technique. We will exhibit the advantages of the certain technique, the resolution of the transferred pixels and the characterization of the samples. Also, we will demonstrate the transfer of graphene arrays on both flexible polymeric and rigid substrates. The transfer of the graphene pixels was accomplished for resolution from 40 μm to 15 μm, whereas the digital manipulation of the transfer enables the deposition of arrays with dimension up to 1 mm2. Furthermore, in this work we will present the fabrication of a flexible capacitance touch sensor. The device is composed by LIFT transfer bottom electrodes and top electrodes and between them we deposit a insulating layer with the assistance of a spin-coater. For bottom electrodes we used silver nanoparticles ink, which was LIFT transferred and laser sintered in order to be conductive and form two pads with a line to connect them. The top electrode is a transferred graphene array with dimension at 1 mm2 and the insulating layer we used is an in-house fabricated PDMS, which was deposited on the half of the bottom electrodes. The quality and quantity of graphene layers were measured and characterized with Scanning Electron Microscopy and micro-Raman spectroscopy. Electrical measurements were conducted on the same samples in order to receive the sheet resistance and the capacitance values. The capacitance measurements were conducted at the top electrode of the flexible touch sensor. Finally, we will introduce the next step in the demonstration of the touch sensor, which is the application of tensile or compressive stress on the flexible touch sensor, which will result in accumulation of different capacitance.
Ιn the current work we will present the transfer hBN, MoS2 and Bi2Se3-xSx by using the Laser Induced Transfer technique on rigid and flexible substrates. We will exhibit the advantages of the certain technique, the resolution of the transferred pixels and the characterization methods such as Scanning Electron Microscopy, Raman spectroscopy and Atomic Force Microscopy. Furthermore, we will refer to the possible applications concerning the Bi2Se3-xSx and the hBN. Finally, we will support the experimental results with the corresponding theoretical results of ab initio Molecular Dynamics (AIMD) with main purpose to explain the detachment and the attachment of the 2D materials from the donor to the receiver substrate.
KEYWORDS: Graphene, Modeling, Chemical vapor deposition, Scanning electron microscopy, Receivers, Raman spectroscopy, Atomic force microscopy, Copper, Nickel, Chemical species
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