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30 May 2022 Low-phonon rare-earth doped GaGe-based chalcogenide glasses for mid-IR laser gain materials
Ei E. Brown, Zackery Fleischman, Jason McKay, Jazmine Riggins, Uwe Hommerich, Witold Palosz, Sudhir Trivedi, Mark Dubinskii
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Proceedings Volume PC12092, Laser Technology for Defense and Security XVII; PC1209202 (2022) https://doi.org/10.1117/12.2621756
Event: SPIE Defense + Commercial Sensing, 2022, Orlando, Florida, United States
Abstract
A large number of rare-earth (RE) activated materials have been investigated to develop new solid state infrared (IR) laser sources for potential applications in atmospheric sensing, material processing, laser remote sensing, medicine, and free space communications. RE3+-doped low-phonon chalcogenide glasses have shown efficient mid-IR emission as well as lasing at room temperature. In this work, we report the results of a comparative study of mid-IR spectroscopic properties of RE3+ doped chalcogenide glasses (e.g. GaGeX (X= S, Se)) aimed at exploring their potential for efficient mid-IR laser operation.
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Ei E. Brown, Zackery Fleischman, Jason McKay, Jazmine Riggins, Uwe Hommerich, Witold Palosz, Sudhir Trivedi, and Mark Dubinskii "Low-phonon rare-earth doped GaGe-based chalcogenide glasses for mid-IR laser gain materials", Proc. SPIE PC12092, Laser Technology for Defense and Security XVII, PC1209202 (30 May 2022); https://doi.org/10.1117/12.2621756
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KEYWORDS
Mid-IR
Chalcogenide glass
Solid state lasers
Oxides
Phonons
Remote sensing
Selenium
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