Evaluation of LS printing and general understanding of imaging with DF low-n mask

Tatiana Kovalevich; Lieve Van Look; Joern-Holger Franke; Vicky Philipsen

doi:10.1117/12.2644701

11 November 2022 Evaluation of LS printing and general understanding of imaging with DF low-n mask

Tatiana Kovalevich, Lieve Van Look, Joern-Holger Franke, Vicky Philipsen

Proceedings Volume PC12292, International Conference on Extreme Ultraviolet Lithography 2022; PC122920M (2022) https://doi.org/10.1117/12.2644701
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States

Abstract

One of the ways to push down resolution limits in EUV lithography is to use alternative masks. In this work, we study the performance of a low-n absorber dark field (DF) mask for L/S printing. Comparing to TaBN absorber mask, low-n DF mask brings contrast gain for dense L/S. Yet we observe large best focus shifts for isolated features. In this work we demonstrate how adding assist features can resolve this limitation.

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Citation Download Citation

Tatiana Kovalevich, Lieve Van Look, Joern-Holger Franke, and Vicky Philipsen "Evaluation of LS printing and general understanding of imaging with DF low-n mask", Proc. SPIE PC12292, International Conference on Extreme Ultraviolet Lithography 2022, PC122920M (11 November 2022); https://doi.org/10.1117/12.2644701

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KEYWORDS

Photomasks

SRAF

Printing

Extreme ultraviolet

Extreme ultraviolet lithography

Metals

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