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Hexagonal boron nitride (hBN) is a two-dimensional van der Waals material and is composed of boron and nitrogen atoms in a hexagonal lattice. hBN is the wide-bandgap semiconductor with a band of 6.4 eV and shows efficient band edge cathodoluminescence at 215 nm as well as lasing behavior. Here I will present the efficient DUV electroluminescence (EL) in band edge emission at 215 nm as well as broad 303-333 nm emission peaks from hBN van der Waals heterostructure. We observed that 303-333 nm broad emissions with phonon replica of optical phonon energy of hBN based on the Franck-Condon principle, which are attributed to the electric field induced color centers and its highly localized excitons features. These results demonstrate the promising developments of a highly efficient solid-state DUV light source at the nanoscale and allow the development of the key architectures for DUV nanophotonic, bio-sensing, high-precision metrology, and quantum information.
Young Duck Kim
"Hexagonal boron nitride based deep ultraviolet light emitter", Proc. SPIE PC12652, UV and Higher Energy Photonics: From Materials to Applications 2023, PC1265209 (5 October 2023); https://doi.org/10.1117/12.2677312
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Young Duck Kim, "Hexagonal boron nitride based deep ultraviolet light emitter," Proc. SPIE PC12652, UV and Higher Energy Photonics: From Materials to Applications 2023, PC1265209 (5 October 2023); https://doi.org/10.1117/12.2677312