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13 March 2024 Resonant excitation of 1.5μm semiconductor quantum dots with VECSEL
Teemu Hakkarainen, Joonas Hilska, Sanna Ranta, Markus Peil, Abhiroop Chellu, Mircea Guina, Arttu Hietalahti, Emmi Kantola, Jussi-Pekka Penttinen
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Proceedings Volume PC12868, Vertical External Cavity Surface Emitting Lasers (VECSELs) XIII; PC128680D (2024) https://doi.org/10.1117/12.3004970
Event: SPIE LASE, 2024, San Francisco, California, United States
Abstract
VECSELs have already been successfully used for quantum experiments based on ion and atom systems, where the main desired features are narrow linewidth, low noise, and stability. Here we are exposing the broad tuning capability of the VEXLUM VALO single-frequency laser platform for the resonant excitation of recently developed GaSb-based semiconductor quantum dots, which can provide single-photon emission in the 3rd telecom widow. The VECSEL allows direct excitation of a single quantum dot and elimination of complex charge relaxation paths in the surrounding semiconductor matrix, thus improving the charge stability of the quantum dot.
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Teemu Hakkarainen, Joonas Hilska, Sanna Ranta, Markus Peil, Abhiroop Chellu, Mircea Guina, Arttu Hietalahti, Emmi Kantola, and Jussi-Pekka Penttinen "Resonant excitation of 1.5μm semiconductor quantum dots with VECSEL", Proc. SPIE PC12868, Vertical External Cavity Surface Emitting Lasers (VECSELs) XIII, PC128680D (13 March 2024); https://doi.org/10.1117/12.3004970
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KEYWORDS
Semiconductor quantum dots
Vertical external cavity surface emitting lasers
Quantum systems
Quantum photonics
Quantum sources
Quantum technology applications
Sapphire lasers
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