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16 March 2024 Controlling defects in wide-bandgap oxides for memristor applications
Hartwin Peelaers
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Proceedings Volume PC12887, Oxide-based Materials and Devices XV; PC128870A (2024) https://doi.org/10.1117/12.3013480
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Memristors, with proposed applications for logic gates, non-volatile memory, and neuromorphic computing, typically consist of an oxide sandwiched between two metal contacts. When a voltage is applied, oxygen vacancies diffuse through the material and form a conducting filament, causing the memristor to switch from a high resistance state (HRS) to a low resistance state (LRS). Using density functional theory with hybrid functionals, we show the atomistic mechanisms on how Mg doping of Al2O3 can increase the performance of memristors, and how we can tune the performance further by adding or alloying with Ga2O3.
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Hartwin Peelaers "Controlling defects in wide-bandgap oxides for memristor applications", Proc. SPIE PC12887, Oxide-based Materials and Devices XV, PC128870A (16 March 2024); https://doi.org/10.1117/12.3013480
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KEYWORDS
Oxides
Oxygen
Alloys
Doping
Magnesium
Materials properties
Resistance
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