Ultra low density quantum dot for high purity and scalable single photon sources

Chen Shang; Marco De Gregorio; Sven Höfling; John Bowers; Andreas Pfenning; Tobias Huber

doi:10.1117/12.3008528

13 March 2024 Ultra low density quantum dot for high purity and scalable single photon sources

Chen Shang, Marco De Gregorio, Sven Höfling, John Bowers, Andreas Pfenning, Tobias Huber

Proceedings Volume PC12891, Silicon Photonics XIX; PC1289105 (2024) https://doi.org/10.1117/12.3008528
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

The development of quantum photonic technologies will fuel a paradigm shift in data processing and communication protocols. A controlled generation of non-classical states of light is a challenging task at the heart of such technologies. Epitaxially grown self- assembled semiconductor quantum dots (QDs) offer the advantages of deterministic generation of single photons and prospects of device integration. By growing such QD structures only in designated locations on (001) Si substrate, the quantum properties of the emitted photons could be tuned with the built-in thermal stress for generating highly entangled photon pairs.

Conference Presentation

Citation Download Citation

Chen Shang, Marco De Gregorio, Sven Höfling, John Bowers, Andreas Pfenning, and Tobias Huber "Ultra low density quantum dot for high purity and scalable single photon sources", Proc. SPIE PC12891, Silicon Photonics XIX, PC1289105 (13 March 2024); https://doi.org/10.1117/12.3008528

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