In the field of in-memory computing for artificial intelligence (AI), the traditional reliance on analog memory for storing synaptic weights presents significant challenges, particularly when using Magnetic Tunnel Junctions (MTJs), which are limited by their inherently binary nature. However, the advent of Binarized Neural Networks (BNNs) has opened a new avenue for leveraging binary storage mechanisms, offering a promising solution for energy-constrained and miniaturized AI systems. This presentation unveils a fully integrated implementation of a BNN using 32k binary memristors. We detail the design and fabrication of our system and its operational excellence even under variable power conditions in an energy harvesting scenario, demonstrating its potential as a resilient and energy-frugal AI platform. While our current work employs hafnium oxide memristors, the design principles and architecture we propose are readily adaptable to MTJs, suggesting a seamless transition pathway to spintronic implementations in the future. We also compare our approach to other research spintronic research endeavors, to prove a comprehensive view of the field's direction.
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