Spin injection and relaxation in GaN-based semiconductors

Shuaiyu Chen; Zhenhao Sun; Shixiong Zhang; Xingchen Liu; Xiaoyue Zhang; Weikun Ge; Bo Shen; Ning Tang

doi:10.1117/12.3027389

4 October 2024 Spin injection and relaxation in GaN-based semiconductors

Shuaiyu Chen, Zhenhao Sun, Shixiong Zhang, Xingchen Liu, Xiaoyue Zhang, Weikun Ge, Bo Shen, Ning Tang

Proceedings Volume PC13119, Spintronics XVII; PC131191V (2024) https://doi.org/10.1117/12.3027389
Event: Nanoscience + Engineering, 2024, San Diego, California, United States

Abstract

GaN-based semiconductors attract much attention owing to the theoretically high Curie temperature of GaN-based diluted magnetic semiconductors and novel spin-orbit coupling(SOC) properties due to the strong polarization electric field. To overcome the conductance mismatch issue in a two-dimensional electron gas (2DEG) system, we take an ultrathin AlN layer at the hetero-interface as a barrier to form high-quality 2DEG in the triangular quantum well and a tunneling barrier for the spin injection. As for spin relaxation, owing to the canceled spin–orbit coupling (SOC), the spin relaxation time as long as 311 ps in InGaN/GaN multiple quantum wells is obtained at room temperature, being much longer than that in bulk GaN. Further, spin-polarized carrier transfer and spin relaxation processes in 2DEG of the InGaN/GaN QW were investigated by photon-energy dependent TRKR measurements.

Conference Presentation

Citation Download Citation

Shuaiyu Chen, Zhenhao Sun, Shixiong Zhang, Xingchen Liu, Xiaoyue Zhang, Weikun Ge, Bo Shen, and Ning Tang "Spin injection and relaxation in GaN-based semiconductors", Proc. SPIE PC13119, Spintronics XVII, PC131191V (4 October 2024); https://doi.org/10.1117/12.3027389

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