Paper
30 December 1981 Scanning Microellipsometer For The Spatial Characterization Of Thin Films
D. J. Dunlavy, R. B . Hammond, R. K. Ahrenkiel
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Proceedings Volume 0288, Los Alamos Conf on Optics '81; (1981) https://doi.org/10.1117/12.932075
Event: Los Alamos Conference on Optics, 1981, Los Alamos, United States
Abstract
A polarization-modulated ellipsometer was constructed to investigate the optical properties of surfaces and transparent thin films. In the latter case, the measurement gives a unique determination of the index of refraction n and film thickness t. Using a HeNe laser light source, the beam was focused to a spot size of 50 μm. By stepping the sample across the focal point of the laser beam in both x and y directions, the spatial uniformity could be measured. This apparatus was particularly useful for optical profiling laser-annealed oxide films grown on GaAs. A new technique for laser annealing native oxides on GaAs produced the need for observing spatial structure with spatial resolution of less than 100 μm. Here the laser pulse produced a "crater" in the oxide due to localized healing and subsequent densification of the film (Figs. 1 & 2). This technique allows profiling of film index of refraction and thickness across the laser irradiated area--about 2 to 3 mm in our case. A number of applications in microelectronics are suggested.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. J. Dunlavy, R. B . Hammond, and R. K. Ahrenkiel "Scanning Microellipsometer For The Spatial Characterization Of Thin Films", Proc. SPIE 0288, Los Alamos Conf on Optics '81, (30 December 1981); https://doi.org/10.1117/12.932075
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Cited by 3 scholarly publications and 1 patent.
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KEYWORDS
Calibration

Refraction

Oxides

Linear polarizers

Modulators

Optical components

Thin films

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