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The problems of making accurate measurements of critical dimensions of features on integrated photomasks and silicon wafers are discussed and the currently employed optical measurement techniques described. Sources of systematic uncertainty in such measurements are considered. Measurement equipment developed at NPL and the NPL Photomask Linewidth Standard are described, and approaches to profile measurement of features on silicon wafers are discussed.
M. J. Downs andN. P. Turner
"Application Of Optical Microscopy To Dimensional Measurements In Microelectronics", Proc. SPIE 0368, Microscopy: Techniques and Capabilities, (29 March 1983); https://doi.org/10.1117/12.934330
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M. J. Downs, N. P. Turner, "Application Of Optical Microscopy To Dimensional Measurements In Microelectronics," Proc. SPIE 0368, Microscopy: Techniques and Capabilities, (29 March 1983); https://doi.org/10.1117/12.934330