Options And Oportunities With Inorganic Photoresist Systems

S. A. Lis; J. M . Lavine; G. M . Goldberg; J. I. Masters

doi:10.1117/12.935091

7 November 1983 Options And Oportunities With Inorganic Photoresist Systems

S. A. Lis, J. M . Lavine, G. M . Goldberg, J. I. Masters

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935091
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

The submicron lithographic capability of several compositions of GeSe have been most conclusively shown by Tai and his co-workers.¹ Others^2,3,4have shown that As₂S₃ and some of the other chalcogenides exhibit similar potential. In this paper we shall report on an extensive investigation of As₂S₃,.As₂Se3 and GeSe2 used in conjunction with a variety of Ag-bearing materials such as evaporated Ag, Ag₂S, Ag₂Se and Ag₂Te as well as with chemically applied Ag-bearing layers. We shall describe both wet and dry processing tech-niques used with these materials. We shall assess the submicron lithographic capabilities, processing latitudes and results obtained with the matrix combinations of these materials and show our experimental results.

Citation Download Citation

S. A. Lis, J. M . Lavine, G. M . Goldberg, and J. I. Masters "Options And Oportunities With Inorganic Photoresist Systems", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935091

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