Submicron Lithography Radiation Damage In Silicon And Gallium Arsenide ICs

D. Howard Phillips

doi:10.1117/12.935096

7 November 1983 Submicron Lithography Radiation Damage In Silicon And Gallium Arsenide ICs

D. Howard Phillips

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935096
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

This paper presents data comparing the radiation hardness of silicon and GaAs devices. Data presented in conjunction with this paper suggest that, when state-of-the-art electron-beam lithography is used to fabricate devices, GaAs offers a radiation-hardness advantage for certain specialty applications, including radiation-hardened spacecraft electronics.

Citation Download Citation

D. Howard Phillips "Submicron Lithography Radiation Damage In Silicon And Gallium Arsenide ICs", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935096

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