Linear Correction Of The Influence Of Thickness Errors During The Evaporation Process

C. J. van der Laan; H. J. Frankena

doi:10.1117/12.935510

28 November 1983 Linear Correction Of The Influence Of Thickness Errors During The Evaporation Process

C. J. van der Laan, H. J. Frankena

Proceedings Volume 0401, Thin Film Technologies I; (1983) https://doi.org/10.1117/12.935510
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland

Abstract

During the production of dielectric thin film stacks for optical use, small thickness errors are unavoidable. These can be detrimental for the reflectance curve R as a function of the wavelength λ. If the thickness error for a certain layer is known, however, its influence on the reflectance can be reduced by correcting the thicknesses of the following layers. Starting from the matrix of derivatives ∂R_j/∂^tk, where Rj is the reflectance of the j-th extremum and tk the thickness of the k-th layer, a method is developed which calculates these corrections during the production process of the stack. Examples will be given, using a quartz crystal monitoring system by which an error is easy detectable. Using this method, the deviations in the reflectance curve can be reduced by a factor of about five. This resulting reduction is strongly dependent on the error in the last layer of the stack for which no compensation is possible.

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C. J. van der Laan and H. J. Frankena "Linear Correction Of The Influence Of Thickness Errors During The Evaporation Process", Proc. SPIE 0401, Thin Film Technologies I, (28 November 1983); https://doi.org/10.1117/12.935510

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KEYWORDS

Reflectivity

Matrices

Coating

Reflection

Chemical elements

Actinium

Aluminum

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