Direct-Write Electron Beam Patterning Reregistration And Metrology

William B. Glendinning; Wayne M. Goodreau

doi:10.1117/12.943059

15 October 1984 Direct-Write Electron Beam Patterning Reregistration And Metrology

William B. Glendinning, Wayne M. Goodreau

Proceedings Volume 0480, Integrated Circuit Metrology II; (1984) https://doi.org/10.1117/12.943059
Event: 1984 Technical Symposium East, 1984, Arlington, United States

Abstract

To pattern high resolution integrated circuit substrates for multilevel fabrication processes demands exacting alignment and reregistration procedures of a direct-write electron beam exposure system. A laboratory spot-electron-beam direct-write exposure system (LEBES-D, Perkin-Elmer/ETEC) using a laser interferometer controlled stage with a stage error loop to the beam deflection subsystem has been adopted for fine line patterning applications. Single and multiple subfield overlay writing are performed with undesirable errors stemming from both operator and equipment subsystem factors. An optically read vernier metrology method is used to measure overlay errors to below 0.1 microns.

Citation Download Citation

William B. Glendinning and Wayne M. Goodreau "Direct-Write Electron Beam Patterning Reregistration And Metrology", Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984); https://doi.org/10.1117/12.943059

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