Overlay Analysis Of Step-And-Repeat Lithographic Systems For Mask Making

L. C. Hsia; L. S. Su; R. L. West

doi:10.1117/12.943057

15 October 1984 Overlay Analysis Of Step-And-Repeat Lithographic Systems For Mask Making

L. C. Hsia, L. S. Su, R. L. West

Proceedings Volume 0480, Integrated Circuit Metrology II; (1984) https://doi.org/10.1117/12.943057
Event: 1984 Technical Symposium East, 1984, Arlington, United States

Abstract

The demand for smaller device geometrics and larger wafer size has drastically increased the need for more accurate level-to-level registration. It is more important than ever before to understand and control the overlay parameter of a step-and-repeat mask-making system. Furthermore, such an understanding is necessary for evaluation of mask quality. This paper discusses some important aspects of mask-making systems and gives a mathematical description of the first order and higher-order parameters. Some measurement techniques for obtaining those parameters are presented. Data are presented for special test patterns and for product masks fabricated on both optical and e-beam systems. This paper also includes a discussion of measurement strategy and a scheme for data reduction which minimizes estimating errors.

Citation Download Citation

L. C. Hsia, L. S. Su, and R. L. West "Overlay Analysis Of Step-And-Repeat Lithographic Systems For Mask Making", Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984); https://doi.org/10.1117/12.943057

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