Semiconductor Wafer Inspection

Lionel R. Baker

doi:10.1117/12.943042

15 October 1984 Semiconductor Wafer Inspection

Lionel R. Baker

Proceedings Volume 0480, Integrated Circuit Metrology II; (1984) https://doi.org/10.1117/12.943042
Event: 1984 Technical Symposium East, 1984, Arlington, United States

Abstract

The yield of integrated circuit devices made from a semiconductor wafer is known to depend critically on the quality of the bulk material and the perfection of the surfaces generated. Two new quality control instruments which measure infrared strain birefringence and quantify the residual defects, such as digs and scratches and contamination on the surface of the wafer, will be described. Typical results obtained on a variety of wafers will be presented.

Citation Download Citation

Lionel R. Baker "Semiconductor Wafer Inspection", Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984); https://doi.org/10.1117/12.943042

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