Numerical Calculations Of Effective Barrier Heights Of Metal/Ge Contacts Formed By Ion Implantation

E. D. Marshall; M. W. Randolph; C. S. Wu; S. S. Lau

doi:10.1117/12.946476

9 April 1985 Numerical Calculations Of Effective Barrier Heights Of Metal/Ge Contacts Formed By Ion Implantation

E. D. Marshall, M. W. Randolph, C. S. Wu, S. S. Lau

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946476
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

Schottky barrier heights may be modified by means of shallow ion implantation. In this paper, a numerical method is presented to calculate effective barrier heights for metal-semiconductor contacts with arbitrary doping profiles. Thermionic current, image force lowering and tunneling current are considered. The transmission (tunneling) coefficient is computed by numerical solution of Schrodinger's equation and wave function matching at boundaries. A metal-germanium contact test case is investigated. This scheme may be applicable to practical implant conditions where dopant redistribution is significant.

Citation Download Citation

E. D. Marshall, M. W. Randolph, C. S. Wu, and S. S. Lau "Numerical Calculations Of Effective Barrier Heights Of Metal/Ge Contacts Formed By Ion Implantation", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946476

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