Paper
24 October 1985 Millimeter-Wave Active Solid-State Devices
Y. E. Ma
Author Affiliations +
Proceedings Volume 0544, Millimeter Wave Technology III; (1985) https://doi.org/10.1117/12.948259
Event: 1985 Technical Symposium East, 1985, Arlington, United States
Abstract
The renewed interest in millimeter-wave systems in recent years has stimulated development effort of various solid-state devices. As a result, millimeter-wave IMPATT and Gunn device technologies are now well established for systems applications and the GaAs FET technology has been progressing rapidly extending its upper frequency range to beyond 70 GHz. This paper presents an overview of the current status of millimeter-wave active solid-state devices. The design, material, and fabrication of each device are briefly described and current performances of these devices are reported.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. E. Ma "Millimeter-Wave Active Solid-State Devices", Proc. SPIE 0544, Millimeter Wave Technology III, (24 October 1985); https://doi.org/10.1117/12.948259
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Cited by 5 scholarly publications.
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KEYWORDS
Diodes

Gallium arsenide

Silicon

Field effect transistors

Doping

Oscillators

Electrons

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