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Molecular beam techniques have been used to produce optical thin films with a high resistance to laser induced damage at 10.6μm. Cross-sectional transmission electron micrographs XTEM demonstrate that the films have a polycrystalline columnar morphology with grain size dependent on deposition temperature and film material, but in the range 250-1000A for ZnSe. SiOx films produced by RF sputtering in ultra clean environments are amorphous and featureless in cross section. A characteristic feature of all films so far produced in UHV is the complete absence of porosity. Interface perfection is high. The MBE techniques allow a high degree of control over the film deposition process and have the potential for allowing the growth of novel coating structures especially those based on graded index designs.
K. L. Lewis,A. M. Pitt,J. A. Savage,A. G. Cullis,N. G. Chew, andL. Charlwood
"Molecular Beam Techniques for Optical Thin Film Fabrication", Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986); https://doi.org/10.1117/12.951775
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K. L. Lewis, A. M. Pitt, J. A. Savage, A. G. Cullis, N. G. Chew, L. Charlwood, "Molecular Beam Techniques for Optical Thin Film Fabrication," Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986); https://doi.org/10.1117/12.951775