Paper
2 February 1988 Electron Beam Testing And Its Applications To VLSI Technology
S. V. Pabbisetty, Kumar Gavisetty, Steve Vaughan, Kendall Scott Wills
Author Affiliations +
Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940971
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
With the recent advances in instrumentation, automation and spectrometer design, the Electron Beam Tester is fast becoming a standard tool for design verification and failure analysis of Very Large Scale Integrated Circuit (VLSI) technology products. This paper presents a brief overview of the principles of operation and a discussion of the different testing modes. The application of voltage contrast to VLSI technology is illustrated with a few typical examples taken from failure analysis and design verification stages of memory and microprocessor products. Present limitations and future trends of Electron Beam Testing are discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. V. Pabbisetty, Kumar Gavisetty, Steve Vaughan, and Kendall Scott Wills "Electron Beam Testing And Its Applications To VLSI Technology", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940971
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Cited by 1 scholarly publication.
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KEYWORDS
Electron beams

Very large scale integration

Integrated circuits

Control systems

Spectroscopy

Failure analysis

Scanning electron microscopy

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