Paper
2 February 1988 Picosecond Resolution Sampling Via Multiphoton Photoemission
A. M. Weiner, P. S.D. Lin, R. B. Marcus
Author Affiliations +
Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940950
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Photoemissive sampling was recently introduced as a new, contactless method for probing picosecond electrical waveforms on any semiconductor. In our experiments, femtosecond optical pulses from a visible laser stimulate multiphoton photoelectron emission from metal lines on the surface of the device under test. The potential at the emitting surface is derived from energy analysis of the photoelectrons. We have investigated experimentally the temporal resolution of photoemissive sampling by performing sampling measurements of picosecond electrical transients propagating on transmission line structures on gallium arsenide. Photoemissive sampling measurements of picosecond electrical steps generated photoconductively on a 5-μm gold coplanar transmission line demonstrate a temporal resolution of 5-psec, with a voltage sensitivity of 10 mV/Hz.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. M. Weiner, P. S.D. Lin, and R. B. Marcus "Picosecond Resolution Sampling Via Multiphoton Photoemission", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940950
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KEYWORDS
Picosecond phenomena

Temporal resolution

Electrodes

Gallium arsenide

Gold

Metals

Laser beam diagnostics

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