Wideband Probing Techniques For Planar Devices: A Review

Eric w. Strid

doi:10.1117/12.940939

2 February 1988 Wideband Probing Techniques For Planar Devices: A Review

Eric w. Strid

Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940939
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Abstract: A review of high-frequency wafer-probing techniques which use contact to the device under test is given. 50-ohm probes have recently been developed for frequencies up to 50 GHz. On-wafer impedance standards and calibration accuracies have also improved. Probes for high-speed MSI circuits require low-impedance power-supply connections. Probes for non-intrusive measurement of internal IC nodes are also reviewed.

Citation Download Citation

Eric w. Strid "Wideband Probing Techniques For Planar Devices: A Review", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940939

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