Temperature Dependence Of Threshold Current Of Double Quantum Well, Separately Confined Heterostructure (AlGa)As/GaAs Lasers Grown By MOCVD

B Garrett; R W Glew; E J Thrush

doi:10.1117/12.943407

16 May 1988 Temperature Dependence Of Threshold Current Of Double Quantum Well, Separately Confined Heterostructure (AlGa)As/GaAs Lasers Grown By MOCVD

B Garrett, R W Glew, E J Thrush

Author Affiliations +

Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988) https://doi.org/10.1117/12.943407
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

The temperature sensitivity of threshold current of double quantum well lasers is studied both theoretically and experimentally over the temperature range 77 K to 300 K. It is found that these devices behave predictably up to 160 K but that the model used fails to describe the temperature sensitivity beyond 160 K. Lasers with reduced threshold gain have a lower temperature sensitivity around room temperature at the expense of an increased threshold current density.

Citation Download Citation

B Garrett, R W Glew, and E J Thrush "Temperature Dependence Of Threshold Current Of Double Quantum Well, Separately Confined Heterostructure (AlGa)As/GaAs Lasers Grown By MOCVD", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); https://doi.org/10.1117/12.943407

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