Ultra High Speed Electronics Based On Proposed High Tc Superconductor Switching Devices

B. A. Biegel; R. Singh; F. Radpour

doi:10.1117/12.947464

23 August 1988 Ultra High Speed Electronics Based On Proposed High T_c Superconductor Switching Devices

B. A. Biegel, R. Singh, F. Radpour

Proceedings Volume 0948, High-Tc Superconductivity: Thin Films and Devices; (1988) https://doi.org/10.1117/12.947464
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

The development of superconductivity near 100 K allows hybrid superconductor/semiconductor electronic devices to be experimentally investigated as a means of realizing improved ultra high speed very large scale integration (VLSI) electronics. Incorporating superconductors into conventional semiconductor structures will be the most likely approach to developing hybrid VLSI devices. The analysis of passive hybridization (using superconductive interconnects) of semiconductor devices concludes that this approach might produce significant benefits in at least some cases. Active hybridization of semiconductor devices, in which the inclusion of superconductors in a semiconductor device significantly alters device operation, is treated briefly. Such devices might be a means of achieving revolutionary rather than evolutionary improvement of electronic systems. The hybridization schemes are illustrated with a proposed ultra high speed resonant tunneling transistor (RTT) structure and with hybrid MOSFET structures. From the processing perspective, rapid isothermal processing (RIP) based on incoherent light sources is a promising technology for the fabrication of hybrid devices.

Citation Download Citation

B. A. Biegel, R. Singh, and F. Radpour "Ultra High Speed Electronics Based On Proposed High T_c Superconductor Switching Devices", Proc. SPIE 0948, High-Tc Superconductivity: Thin Films and Devices, (23 August 1988); https://doi.org/10.1117/12.947464

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