Temperature evolution of topological surface states in bismuth selenide thin films studied using terahertz spectroscopy

Varun S. Kamboj; Angadjit Singh; Harvey E. Beere; Thorsten Hesjedal; Crispin H. W. Barnes; David A. Ritchie

doi:10.1117/12.2249587

24 February 2017 Temperature evolution of topological surface states in Bi₂Se₃ thin films studied using terahertz spectroscopy

Varun S. Kamboj, Angadjit Singh, Harvey E. Beere, Thorsten Hesjedal, Crispin H. W. Barnes, David A. Ritchie

Author Affiliations +

Proceedings Volume 10103, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X; 101030D (2017) https://doi.org/10.1117/12.2249587
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

We have measured the terahertz (THz) conductance of a 23 quintuple layer thick film of bismuth selenide (Bi₂Se₃) and found signatures for topological surface states (TSSs) below 50 K. We provide evidence for a topological phase transition as a function of lattice temperature by optical means. In this work, we used THz time-domain spectroscopy (THz-TDS) to measure the optical conductance of Bi₂Se₃, revealing metallic behavior at temperatures below 50 K. We measure the THz conductance of Bi₂Se₃ as 10 e²/h at 4 K, indicative of a surface dominated response. Furthermore, the THz conductance spectra reveal characteristic features at ~1.9 THz attributed to the optical phonon mode, which is weakly visible at low temperatures but which becomes more prominent with increasing temperature. These results present a first look at the temperature-dependent behavior of TSSs in Bi₂Se₃ and the capability to selectively identify and address them using THz spectroscopy.

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Varun S. Kamboj, Angadjit Singh, Harvey E. Beere, Thorsten Hesjedal, Crispin H. W. Barnes, and David A. Ritchie "Temperature evolution of topological surface states in Bi₂Se₃ thin films studied using terahertz spectroscopy", Proc. SPIE 10103, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X, 101030D (24 February 2017); https://doi.org/10.1117/12.2249587

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