Impact of nanocrystal(s) location on C-V-t and I-V-t characteristics of ncMOS structures

D. Tanous; A. Mazurak; B. Majkusiak

doi:10.1117/12.2261816

22 December 2016 Impact of nanocrystal(s) location on C-V-t and I-V-t characteristics of ncMOS structures

D. Tanous, A. Mazurak, B. Majkusiak

Proceedings Volume 10175, Electron Technology Conference 2016; 101750H (2016) https://doi.org/10.1117/12.2261816
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland

Abstract

We present the study of impact of the nanocrystal position and oxide layers thicknesses of the metal-insulatorsemiconductor structure with nanocrystals embedded in the insulator layer on the time-dependent current-voltage and capacitance-voltage characteristics. The theoretical considerations are based on the developed numerical model of a double-barrier MOS structure. The dominant current path in the structure is analysed in respect to the nanocrystals charging/discharging processes.

Citation Download Citation

D. Tanous, A. Mazurak, and B. Majkusiak "Impact of nanocrystal(s) location on C-V-t and I-V-t characteristics of ncMOS structures", Proc. SPIE 10175, Electron Technology Conference 2016, 101750H (22 December 2016); https://doi.org/10.1117/12.2261816

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