Millimeter-wave power HEMT technology

Huan-Chun Yen; K. L. Tan; Richard Lai; C. H. Chen; Mike Biedenbender; Dwight C. Streit; Michael Wojtowicz

doi:10.1117/12.194301

14 December 1994 Millimeter-wave power HEMT technology

Huan-Chun Yen, K. L. Tan, Richard Lai, C. H. Chen, Mike Biedenbender, Dwight C. Streit, Michael Wojtowicz

Proceedings Volume 10276, Millimeter and Microwave Engineering for Communications and Radar: A Critical Review; 1027607 (1994) https://doi.org/10.1117/12.194301
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

Recent improvements in material structure, device layout, fabrication process, and device matching have resulted in simultaneous improvements in power output, power gain, and power-added efficiency from large size GaAs-based pseudomorphic AlGaAs/hiGaAs HEMTs at millimeter-wave frequencies. Consequently efficient watt level building blocks are now available to build solid state power amplifiers capable of 1 to 20 watt power output for next generation military and civilian systems. This paper describes a state-of-the-art 0.15 pm power HEMT technology suitable for applications in this frequency range. Examples of MIC and MMIC power amplifier circuits are given to illustrate the achievable power performance. Preliminary study of the power HEMT reliability is also discussed.

Citation Download Citation

Huan-Chun Yen, K. L. Tan, Richard Lai, C. H. Chen, Mike Biedenbender, Dwight C. Streit, and Michael Wojtowicz "Millimeter-wave power HEMT technology", Proc. SPIE 10276, Millimeter and Microwave Engineering for Communications and Radar: A Critical Review, 1027607 (14 December 1994); https://doi.org/10.1117/12.194301

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