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25 September 2017 Ultrafast carrier capture and Auger recombination in individual III-nitride nanowires (Conference Presentation)
Stephane A. Boubanga Tombet, Jeremy B. Wright, Ping Lu, Michael R. C. Williams, Changyi Li, George T. Wang, Rohit P. Prasankumar
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Proceedings Volume 10345, Active Photonic Platforms IX; 1034505 (2017) https://doi.org/10.1117/12.2273227
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States
Abstract
Ultrafast optical microscopy is an important tool
 for examining fundamental phenomena in semiconductor
 nanowires with high temporal and spatial resolution. Here, we used this technique to study carrier dynamics in single
GaN/InGaN core−shell nonpolar multiple quantum well
 nanowires. We find that intraband carrier−carrier scattering is
 the main channel governing carrier capture, while subsequent
 carrier relaxation is dominated by three-carrier Auger
 recombination at higher densities and bimolecular recombina
tion at lower densities. The Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.
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Citation Download Citation
Stephane A. Boubanga Tombet, Jeremy B. Wright, Ping Lu, Michael R. C. Williams, Changyi Li, George T. Wang, and Rohit P. Prasankumar "Ultrafast carrier capture and Auger recombination in individual III-nitride nanowires (Conference Presentation)", Proc. SPIE 10345, Active Photonic Platforms IX, 1034505 (25 September 2017); https://doi.org/10.1117/12.2273227
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KEYWORDS
Ultrafast phenomena
Carrier dynamics
Heterojunctions
Optical microscopy
Quantum wells
Semiconductors
Gallium nitride
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