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14 March 2018 High-speed Pockels effect in strained silicon waveguide (Conference Presentation)
Mathias Berciano, Guillaume Marcaud, Pedro Damas, Xavier Le Roux, Carlos Alonso-Ramos, Diego Pérez-Galacho, Vladyslav Vakarin, Paul Crozat, Daniel Benedikovic, Delphine Marris-Morini, Eric Cassan, Laurent Vivien
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Proceedings Volume 10536, Smart Photonic and Optoelectronic Integrated Circuits XX; 105360H (2018) https://doi.org/10.1117/12.2292550
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
Silicon photonics is being considered as the future photonic platform for low power consumption optical communications. However, silicon is a centrosymmetric crystal, i.e. silicon doesn’t have Pockels effect. Nevertheless, breaking the crystal symmetry of silicon can be used to overcome this limitation. In this work, the crystal modification is achieved by depositing a SiN high-stress overlayer. Recent results on high-speed measurements will be presented and discussed. Both charge effects and Pockels effect induced under an electric field will be also analyzed.
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Mathias Berciano, Guillaume Marcaud, Pedro Damas, Xavier Le Roux, Carlos Alonso-Ramos, Diego Pérez-Galacho, Vladyslav Vakarin, Paul Crozat, Daniel Benedikovic, Delphine Marris-Morini, Eric Cassan, and Laurent Vivien "High-speed Pockels effect in strained silicon waveguide (Conference Presentation)", Proc. SPIE 10536, Smart Photonic and Optoelectronic Integrated Circuits XX, 105360H (14 March 2018); https://doi.org/10.1117/12.2292550
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KEYWORDS
Silicon
Silicon photonics
Crystals
Photonic crystals
Hybrid optics
Integrated optics
Optical communications
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