Atomistic Nature Of Molecular Beam Epitaxially Grown GaAs/Al[sub]x[/sub]Ga[sub]1-x[/sub]As - As Revealed In Luminescence And Raman Spectroscopies

W. C. Tang; Pudong Lao; A. Madhukar

doi:10.1117/12.951569

5 July 1989 Atomistic Nature Of Molecular Beam Epitaxially Grown GaAs/Al_xGa_1-xAs - As Revealed In Luminescence And Raman Spectroscopies

W. C. Tang, Pudong Lao, A. Madhukar

Author Affiliations +

Proceedings Volume 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology; (1989) https://doi.org/10.1117/12.951569
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

The reliability of using commonly employed expressions for extracting the alloy concentration from Raman and photoluminescence peak energies is examined. Study of molecular beam epitaxically grown AlxGa1-xAs alloys shows disagreement in Al% of as large as 20% between the value derived from Raman data and that derived from PL data using these expressions. The atomistic nature of the heterostructure interface imperfection is examined through the study of single quantum well luminescence. Luminescence linewidth as a function of single quantum well width (dw) shows a dw-1 behavior and not the dw-3 behavior as predicted by the well-width-fluctuation model. This measured behavior brought out the importance of the fluctuation in the alloy concentration in both the lateral and growth directions arising from the kinectics of growth.

Citation Download Citation

W. C. Tang, Pudong Lao, and A. Madhukar "Atomistic Nature Of Molecular Beam Epitaxially Grown GaAs/Al_xGa_1-xAs - As Revealed In Luminescence And Raman Spectroscopies", Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); https://doi.org/10.1117/12.951569

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