Paper
23 May 1989 Improvements In CCD Quantum Efficiency In The UV And Near-IR
Gary R Sims, Fabiola Griffin, Michael P Lesser
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Abstract
Improvements in CCD sensitivity in the UV and near-IR by using backside illumination, external backside accumulation, and wavelength conversion phosphors is discussed. Quantum efficiencies of greater than 50% in much of the UV and visible are reported through the use of backside illumination and either UV flood or flash gate backside accumulation. Problems with the environmental stability of backside accumulated CCDs and attempts to control the stability through the use of a biased flash gate is discussed. Significant QE gains in the near-IR through backside illumination without backside accumulation are reported. The use of a high-efficiency wavelength conversion phosphor to increase the UV sensitivity of frontside illuminated CCDs is presented. Results are presented that demonstrate that the QE of a typical polyphase frontside illuminated CCD can be increased from virtually zero to 20% in the UV.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary R Sims, Fabiola Griffin, and Michael P Lesser "Improvements In CCD Quantum Efficiency In The UV And Near-IR", Proc. SPIE 1071, Optical Sensors and Electronic Photography, (23 May 1989); https://doi.org/10.1117/12.952504
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CITATIONS
Cited by 10 scholarly publications and 2 patents.
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KEYWORDS
Charge-coupled devices

Ultraviolet radiation

Quantum efficiency

Oxides

Optical sensors

Oxygen

Photography

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