Study of InGaAs/InAlAs avalanche photodiodes grown on InP

Da-nong Zheng; Ying-Qiang Xu; Hai-Qiao Ni; Zhichuan Niu

doi:10.1117/12.2515586

19 November 2018 Study of InGaAs/InAlAs avalanche photodiodes grown on InP

Da-nong Zheng, Ying-Qiang Xu, Hai-Qiao Ni, Zhichuan Niu

Proceedings Volume 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V; 1082621 (2018) https://doi.org/10.1117/12.2515586
Event: SPIE/COS Photonics Asia, 2018, Beijing, China

Abstract

In this paper, we are report an avalanche photodiodes (APD) with an InGaAs absorption region and an InAlAs avalanche region. Devices are designed with separate absorption, grading, charge, and multiplication (SAGCM) layers on InP substrates, which are demonstrated to detect 1550 nm wavelength light. The epilayers of the APD devices are grown by a Veeco Gen 930 MBE system. The quality of epilayers is good which shown in the surface morphology characterized by AFM. The root mean square (RMS) of surface morphology is only 1.4Å.Operating at room temperature and in the linear mode, the APD achieved a dark-current level of 2.7ｕA/mm²,and a maximum gain of M>300 is demonstrated.

Citation Download Citation

Da-nong Zheng, Ying-Qiang Xu, Hai-Qiao Ni, and Zhichuan Niu "Study of InGaAs/InAlAs avalanche photodiodes grown on InP", Proc. SPIE 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V, 1082621 (19 November 2018); https://doi.org/10.1117/12.2515586

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