Presentation + Paper
26 February 2019 InGaN/GaN μLED SPICE modelling with size-dependent ABC model integration
Anis Daami, François Olivier
Author Affiliations +
Abstract
The need of high brightness micro-displays in portable applications dedicated to mixed and/or virtual reality has drawn an important research wave on InGaN/GaN based micro-sized light emitting diodes (μLEDs). We propose to use a SPICE modelling technique to describe and simulate the electro-optical behavior of the μLED. A sub-circuit portrayal of the whole device will be used to describe current-voltage behavior and the optical power performance of the device based on the ABC model. We suggest an innovative method to derive instantaneously the carrier concentration from the simulated electrical current in order to determine the μLED quantum efficiency. In a second step, a statistical approach is also added into the SPICE model in order to apprehend the spread on experimental data. This μLED SPICE modelling approach is very important to allow the design of robust pixel driving circuits.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anis Daami and François Olivier "InGaN/GaN μLED SPICE modelling with size-dependent ABC model integration", Proc. SPIE 10912, Physics and Simulation of Optoelectronic Devices XXVII, 109120E (26 February 2019); https://doi.org/10.1117/12.2509382
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Light emitting diodes

Electro optical modeling

External quantum efficiency

Quantum efficiency

Device simulation

Mathematical modeling

Back to Top