Recent progress in GaN-based vertical-cavity surface-emitting lasers with lateral optical confinement due to an incorporated curved mirror

Hiroshi Nakajima; Tatsushi Hamaguchi; Masayuki Tanaka; Masamichi Ito; Tatsuro Jyokawa; Tatsuya Mato; Kentaro Hayashi; Maho Ohara; Noriko Kobayashi; Hideki Watanabe; Rintaro Koda; Katsunori Yanashima

doi:10.1117/12.2511469

1 March 2019 Recent progress in GaN-based vertical-cavity surface-emitting lasers with lateral optical confinement due to an incorporated curved mirror

Hiroshi Nakajima, Tatsushi Hamaguchi, Masayuki Tanaka, Masamichi Ito, Tatsuro Jyokawa, Tatsuya Mato, Kentaro Hayashi, Maho Ohara, Noriko Kobayashi, Hideki Watanabe, Rintaro Koda, Katsunori Yanashima

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Proceedings Volume 10918, Gallium Nitride Materials and Devices XIV; 109181J (2019) https://doi.org/10.1117/12.2511469
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

The recent progress of GaN-based vertical-cavity surface-emitting lasers (VCSELs) with incorporated curved mirrors at one end of their cavities is reviewed. GaN-VCSELs consisting of 3 InGaN/GaN quantum wells, current apertures formed by boron ion implantation, and curved mirrors at one end of the cavities were fabricated. The near-field and far-field patterns exhibited Gaussian-like profiles, and their divergences agreed well with the theoretical values calculated from the radius of curvature of the curved mirror and the cavity length. The near-field beam waist for a GaNVCSEL with a 6-μm current aperture was as small as 1.4 μm (half width at 1/e²), which indicated that the light was laterally confined by the incorporated curved mirror and that the current aperture could be made smaller than 6 μm. For a GaN-VCSEL with a current aperture of 4μm, a threshold current of as low as 0.56 mA (J_th = 4.5 kA/cm²) was obtained at room temperature under CW operation at a wavelength of 451.8 nm. To the best of our knowledge, this is the lowest threshold current reported among all-dielectric DBR type GaN-VCSELs and is comparable with the lowest value reported for GaN-VCSELs that have a two-dimensional quantum well structure. The authors believe this result to be a milestone for the realization of GaN-VCSELs with extremely low power consumption.

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Hiroshi Nakajima, Tatsushi Hamaguchi, Masayuki Tanaka, Masamichi Ito, Tatsuro Jyokawa, Tatsuya Mato, Kentaro Hayashi, Maho Ohara, Noriko Kobayashi, Hideki Watanabe, Rintaro Koda, and Katsunori Yanashima "Recent progress in GaN-based vertical-cavity surface-emitting lasers with lateral optical confinement due to an incorporated curved mirror", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181J (1 March 2019); https://doi.org/10.1117/12.2511469

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