Paper
14 August 1989 High Modulation Rate Laser Array For Microwave Optics
S. C. Wang, T. G. Dziura
Author Affiliations +
Abstract
The structure and performance characteristics of a GaAs surface emitting laser (SEL) diode and a 2-D array of SELs is reported. The SEL has a very short optical cavity with a distributed feedback structure, and emits light perpendicular to the wafer surface. The laser shows low threshold current and has an estimated high frequency response of tens of GHz. A 2-D array of SELs with 6 x 16 elements was designed and demonstrated.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. C. Wang and T. G. Dziura "High Modulation Rate Laser Array For Microwave Optics", Proc. SPIE 1102, Optical Technology for Microwave Applications IV, (14 August 1989); https://doi.org/10.1117/12.960531
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KEYWORDS
Semiconductor lasers

Microwave radiation

Modulation

Diodes

Semiconducting wafers

Gallium arsenide

Laser damage threshold

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