Study of synergy phenomena for atomic layer etching of aluminum and hafnium oxides

V. Kuzmenko; A. Miakonkikh; K. Rudenko

doi:10.1117/12.2522473

15 March 2019 Study of synergy phenomena for atomic layer etching of aluminum and hafnium oxides

V. Kuzmenko, A. Miakonkikh, K. Rudenko

Author Affiliations +

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102226 (2019) https://doi.org/10.1117/12.2522473
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

The process of atomic layer etching (ALE) studied for aluminum oxide and hafnium oxide. The process based on cyclic looping of stages 1) BCl₃ adsorption and 2) Ar plasma activation of reaction between adsorbed molecules and surface. The approaches to perform the process on conventional plasma etching tool is considered. The self-saturation of etching process is shown and synergy is calculated. That allows estimating of process window with respect to DC bias and BCl₃ dose. The processes were performed at subzero temperatures of wafer (-20°C) which enhance adsorption of BCl₃ on the sample, while the walls of reactor were kept at elevated temperature (+40°C) to reduce adsorption of chlorine-containing gases on walls. Such an approach, first used in this work, made it possible to increase the reproducibility of atomic layer etching processes, despite the fact that the work was performed in a conventional tool.

Citation Download Citation

V. Kuzmenko, A. Miakonkikh, and K. Rudenko "Study of synergy phenomena for atomic layer etching of aluminum and hafnium oxides", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102226 (15 March 2019); https://doi.org/10.1117/12.2522473

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