High performance printed p-type metal halide and oxide thin film transistors (Conference Presentation)

Yong-Young Noh

doi:10.1117/12.2526865

10 September 2019 High performance printed p-type metal halide and oxide thin film transistors (Conference Presentation)

Yong-Young Noh

Author Affiliations +

Proceedings Volume 11097, Organic and Hybrid Field-Effect Transistors XVIII; 1109706 (2019) https://doi.org/10.1117/12.2526865
Event: SPIE Organic Photonics + Electronics, 2019, San Diego, California, United States

Abstract

Over the past decade, amorphous metal oxide semiconductors have attracted great interest as low-cost alternatives to thin film transistors (TFTs) due to their high electron mobility, high optical transparency, good environmental/thermal stability, and processing versatility. In contrast, realization of high performance transparent p-type oxide semiconductors remain intangible with urgent industrial demands. In this work, we report solution-processed inorganic p-type copper iodide (CuI) and oxide thin film transistors (TFTs). The spin coated CuI film showed high mobility over 2 cm2 V-1 s-1 by proper treatments such as optimization process condition and applying dopant. Transparent complementary inverters composed of p-type CuI and n-type indium gallium zinc oxide TFTs are demonstrated. We also introduce our recent results of perovskite transistors.

Conference Presentation

Citation Download Citation

Yong-Young Noh "High performance printed p-type metal halide and oxide thin film transistors (Conference Presentation)", Proc. SPIE 11097, Organic and Hybrid Field-Effect Transistors XVIII, 1109706 (10 September 2019); https://doi.org/10.1117/12.2526865

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