High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals

V. Kopach; O. Kopach; A. Kanak; L. Shcherbak; P. Fochuk; A. E. Bolotnikov; R. B. James

doi:10.1117/12.2529066

9 September 2019 High-temperature Hall-effect investigations of Cd_0.85Mn_0.10Zn_0.05Te crystals

V. Kopach, O. Kopach, A. Kanak, L. Shcherbak, P. Fochuk, A. E. Bolotnikov, R. B. James

Proceedings Volume 11114, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI; 111141P (2019) https://doi.org/10.1117/12.2529066
Event: SPIE Optical Engineering + Applications, 2019, San Diego, California, United States

Abstract

High temperature Hall-effect investigations were used to study the change of the concentration and mobility of charge-carriers in Cd_0.85Mn_0.10Zn_0.05Te and Cd_0.85Mn_0.10Zn_0.05Te: In crystals grown by the vertical Bridgman technique. The Cd_0.85Mn_0.10Zn_0.05Te and Cd_0.85Mn_0.10Zn_0.05Te: In samples are characterized by optical and electrical measurements, and by IR-microscopy. We determined that the value of band gap increase with the Mn and Zn amount increasing in the Cd_1-x-yMn_xZn_yTe crystals. We also show that after the high-temperature Hall-effect measurements performed under Cd overpressure the both crystals resistivity increase from 10⁴ Ohm×cm to 10⁶ Ohm×cm, and amount and size of Te inclusions decrease. According to the results of the high temperature Hall-effect investigations the temperatures and Cd vapor pressures intervals were established in which Indium plays major role and controls the concentration of charge carriers.

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V. Kopach, O. Kopach, A. Kanak, L. Shcherbak, P. Fochuk, A. E. Bolotnikov, and R. B. James "High-temperature Hall-effect investigations of Cd_0.85Mn_0.10Zn_0.05Te crystals", Proc. SPIE 11114, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI, 111141P (9 September 2019); https://doi.org/10.1117/12.2529066

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