GaN/AlGaN avalanche photodiode detectors for high performance ultraviolet sensing applications

Ashok K. Sood; John W. Zeller; Parminder Ghuman; Sachidananda Babu; Russell D. Dupuis

doi:10.1117/12.2531644

9 September 2019 GaN/AlGaN avalanche photodiode detectors for high performance ultraviolet sensing applications

Ashok K. Sood, John W. Zeller, Parminder Ghuman, Sachidananda Babu, Russell D. Dupuis

Proceedings Volume 11129, Infrared Sensors, Devices, and Applications IX; 111290F (2019) https://doi.org/10.1117/12.2531644
Event: SPIE Optical Engineering + Applications, 2019, San Diego, California, United States

Abstract

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. Al_xGa_1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields. Optical gains greater than 5×10⁶ with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6×6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications.

Conference Presentation

Citation Download Citation

Ashok K. Sood, John W. Zeller, Parminder Ghuman, Sachidananda Babu, and Russell D. Dupuis "GaN/AlGaN avalanche photodiode detectors for high performance ultraviolet sensing applications", Proc. SPIE 11129, Infrared Sensors, Devices, and Applications IX, 111290F (9 September 2019); https://doi.org/10.1117/12.2531644

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available