Impact of EUV multilayer mask defects on imaging performance and its correction methods

Yunyun Hao; Lisong Dong; Xi Chen; Rui Chen; Taian Fan; Yayi Wei; Tianchun Ye

doi:10.1117/12.2536707

26 September 2019 Impact of EUV multilayer mask defects on imaging performance and its correction methods

Yunyun Hao, Lisong Dong, Xi Chen, Rui Chen, Taian Fan, Yayi Wei, Tianchun Ye

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 111471B (2019) https://doi.org/10.1117/12.2536707
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

It is of tremendous impact with multilayer defects, which are caused by particles, substrate pits or scratches, in EUV lithography for the high volume manufacturing. Multilayer defects suppress the productivity and utilization rate of the mask blank. In this paper, we did a thorough investigation by conducting imaging simulations on dense and semi-dense patterns including lines and contact holes. The impact of isolated multilayer defects on the imaging of 22nm half-pitch dense line/contact and 33nm half-pitch semi-dense line has been studied, and the CD errors are calculated. The CD error, caused by the planar defect which is smoothed out during the multilayer deposition process, is found to be within ±10% of target values. This CD error can be compensated by adjusting the exposure dose or local pattern size. In contrast, the non-planar defect, which is not being smoothed in the multilayer surfaces, would lead to severe damages to the lithography performance.

Citation Download Citation

Yunyun Hao, Lisong Dong, Xi Chen, Rui Chen, Taian Fan, Yayi Wei, and Tianchun Ye "Impact of EUV multilayer mask defects on imaging performance and its correction methods", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471B (26 September 2019); https://doi.org/10.1117/12.2536707

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KEYWORDS

Photomasks

Extreme ultraviolet

Deep ultraviolet

Lithography

Manufacturing

Optical proximity correction

Plasma etching

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