Photoluminescence properties of Er doped AS2S3 films deposited using RF co-sputtering and the impact of rapid thermal annealing

Huma Latif; Kunlun Yan; Steve Madden

doi:10.1117/12.2541262

30 December 2019 Photoluminescence properties of Er doped AS₂S₃ films deposited using RF co-sputtering and the impact of rapid thermal annealing

Huma Latif, Kunlun Yan, Steve Madden

Author Affiliations +

Proceedings Volume 11200, AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019; 112003K (2019) https://doi.org/10.1117/12.2541262
Event: ANZCOP, 2019, Melbourne, Australia

Abstract

This work reports the photoluminescence (PL) properties of Er doped AS2S3 films (at 0.1 mol% concentration) fabricated by RF co-sputtering. As sputtered films are shown to exhibit PL degradation only on exposure to the combination of green light and water vapour due to photo-incorporation of OH groups through film nanostructural pores. Rapid Thermal Annealing is investigated as a possible remedy to this issue.

Citation Download Citation

Huma Latif, Kunlun Yan, and Steve Madden "Photoluminescence properties of Er doped AS₂S₃ films deposited using RF co-sputtering and the impact of rapid thermal annealing", Proc. SPIE 11200, AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019, 112003K (30 December 2019); https://doi.org/10.1117/12.2541262

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