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10 March 2020 Franz-Keldysh modulation in GeSn-based heterostructures (Conference Presentation)
Mathieu Bertrand, Lara Casiez, Andréa Quintero, Quang Minh Thai, Jérémie Chrétien, Nicolas Pauc, Rami Khazaka, Philippe Rodriguez, Jean-Michel Hartmann, Alexei Tchelnokov, Vincent Calvo, Vincent Reboud
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Proceedings Volume 11276, Optical Components and Materials XVII; 1127606 (2020) https://doi.org/10.1117/12.2546218
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
We investigated at room temperature the Franz-Keldysh effect in GeSn layers with Sn concentrations up to 13%. Several p-i-n stacks with indirect and direct band-gaps were grown by Reduced Pressure Chemical Vapor Deposition (RPCVD) with Ge2H6, Si2H6 and SnCl4 precursors. Direct band-gap energies and absorption coefficient were determined in transmission by electro-absorption measurements. The direct band-gap position was consistent with our k.p model. A maximum modulation of 1% was obtained at the direct band gap for a 0.5 V bias.
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Mathieu Bertrand, Lara Casiez, Andréa Quintero, Quang Minh Thai, Jérémie Chrétien, Nicolas Pauc, Rami Khazaka, Philippe Rodriguez, Jean-Michel Hartmann, Alexei Tchelnokov, Vincent Calvo, and Vincent Reboud "Franz-Keldysh modulation in GeSn-based heterostructures (Conference Presentation)", Proc. SPIE 11276, Optical Components and Materials XVII, 1127606 (10 March 2020); https://doi.org/10.1117/12.2546218
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KEYWORDS
Heterojunctions
Modulation
Germanium
Measurement devices
Photonics
Mid-IR
Silicon
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