Presentation
10 March 2020 Recent progress in bulk GaN growth (Conference Presentation)
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Abstract
Recent progress in bulk GaN growth technology will be presented. New results of basic ammonothermal GaN crystallization and halide vapor phase epitaxy (HVPE) of GaN will be shown and analyzed. The advantages, disadvantages and challenges of both methods will be discussed. An influence of lateral growth on critical thicknesses and structural quality of crystallized GaN layers by both methods will be demonstrated. Reduction of lateral crystallization and growth only in one crystallographic direction will be shown.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michal Bockowski, Boleslaw Lucznik, Mikolaj Amilusik, Michal Fijalkowski, Kacper Sierakowski, Slawomir Sakowski, Aneta Sidor, Malgorzata Iwinska, Robert Kucharski, Karolina Grabianska, and Tomasz Sochacki "Recent progress in bulk GaN growth (Conference Presentation)", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 1128004 (10 March 2020); https://doi.org/10.1117/12.2545062
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KEYWORDS
Gallium nitride

Crystals

Doping

Manganese

Vapor phase epitaxy

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