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We report on high performance Terahertz Quantum Cascade Lasers with InGaAs and GaAs active regions. Modified doping profiles derived from symmetric structures allowed achieving record output powers of double metal InGaAs/InAlAs THz Quantum Cascade Lasers. The increase of the Al concentration of the barriers in GaAs/AlGaAs devices helped to increase the operating temperature to above 191 K while keeping the threshold current low. This has enabled laser operation by thermoelectric cooling which is very important for application. We demonstrate laser wavelength switching by magnetic field and wavelength selection in Random THz Quantum Cascade Lasers by spatially controlled near-infrared excitation
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Martin Kainz, Sebastian Schönhuber, Michael Jaidl, Gottfried Strasser, Maxwell Andrews, Juraj Darmo, Karl Unterrainer, "High performance and control of THz quantum cascade lasers (Conference Presentation)," Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011J (9 March 2020); https://doi.org/10.1117/12.2543386