Presentation
9 March 2020 High performance and control of THz quantum cascade lasers (Conference Presentation)
Author Affiliations +
Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113011J (2020) https://doi.org/10.1117/12.2543386
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
We report on high performance Terahertz Quantum Cascade Lasers with InGaAs and GaAs active regions. Modified doping profiles derived from symmetric structures allowed achieving record output powers of double metal InGaAs/InAlAs THz Quantum Cascade Lasers. The increase of the Al concentration of the barriers in GaAs/AlGaAs devices helped to increase the operating temperature to above 191 K while keeping the threshold current low. This has enabled laser operation by thermoelectric cooling which is very important for application. We demonstrate laser wavelength switching by magnetic field and wavelength selection in Random THz Quantum Cascade Lasers by spatially controlled near-infrared excitation
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Kainz, Sebastian Schönhuber, Michael Jaidl, Gottfried Strasser, Maxwell Andrews, Juraj Darmo, and Karl Unterrainer "High performance and control of THz quantum cascade lasers (Conference Presentation)", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011J (9 March 2020); https://doi.org/10.1117/12.2543386
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KEYWORDS
Quantum cascade lasers

Terahertz radiation

Aluminum

Doping

Gallium arsenide

Indium gallium arsenide

Magnetism

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