High-performance waveguide unitraveling carrier photodetector based on GaAs0.5Sb0.5/InP type-II heterojunction

Zhenjie Song; Chun Yang; Zichen Feng

doi:10.1117/12.2555021

1 April 2020 High-performance waveguide unitraveling carrier photodetector based on GaAs_0.5Sb_0.5/InP type-II heterojunction

Zhenjie Song, Chun Yang, Zichen Feng

Author Affiliations +

Proceedings Volume 11354, Optical Sensing and Detection VI; 113541Q (2020) https://doi.org/10.1117/12.2555021
Event: SPIE Photonics Europe, 2020, Online Only

Abstract

Heterogeneous III-V/silicon photonic integrated circuits promise to integrated dissimilar materials without compromising their own properties. InP-based high-power and high-speed In_0.53Ga_0.47As modified uni-traveling carrier photodiodes(UTC-PDs) heterogeneously integrated on silicon-on-insulator waveguides have been demonstrated. In this paper, we will propose a novel GaAs_0.5Sb_0.5/InP type-II waveguide UTC-PD. The p-type In_0.53Ga_0.47As absorption layer is replaced by a p-type GaAs_0.5Sb_0.5 layer. Due to the type-II interface between p type GaAs_0.5Sb_0.5 absorber and InP collector, photo-generated electrons generated in the absorption layer are injected into the collection layer with enhanced kinetic energy, which aids their transport toward the collector and minimizes the current blocking effect. Our device shows a significant improvement in the responsivity (1.14A/W) and bandwidth(40.3GHz) compared with that of waveguide UTC-PD with the same thickness of pure In_0.53Ga_0.47As absorber. The demonstrated type-II PD offers a record overestimated saturation current-bandwidth product 4473.3 mA.GHz. These promising results suggest that our proposed GaAs_0.5Sb_0.5/InP type-II waveguide UTC-PD structure can fundamentally overcome the trade-off among bandwidth, responsivity, and length of high-speed waveguide PDs.

Conference Presentation

Citation Download Citation

Zhenjie Song, Chun Yang, and Zichen Feng "High-performance waveguide unitraveling carrier photodetector based on GaAs_0.5Sb_0.5/InP type-II heterojunction", Proc. SPIE 11354, Optical Sensing and Detection VI, 113541Q (1 April 2020); https://doi.org/10.1117/12.2555021

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