Poster
20 August 2020 Characterization of laser epitaxial layers and heterostructures on the base of CdTe and Cd1-xMnxTe crystals
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Conference Poster
Abstract
Epitaxial layers and complex heterostructures on the base of the CdTe and Cd1-xMnxTe crystals were obtained by pulsed laser irradiation both in their transparency and absorption regions. Structural perfection of the laser-epitaxial layers, transition regions and distribution of the Te and Cd inclusions in the area of the laser action were studied. Analysis of the U-V and C-V characteristics of the obtained structures indicates a decrease in influence of surface states at the hetero-boundaries as a result of laser treatment in optimal mode, and also a reduction of reverse dark current and loss current. The spectral characteristics of the laser-epitaxial structures on the base of CdTe and Cd1-xMnxTe show, that they are promising materials for X- and gamma-radiation detectors.
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Viсtor Strebezhev, Petro Fochuk, Olena Maslyanchuk, Ivan Yuriychuk, Victoria Pylypko, Volodymyr Strebezhev, Sergiy Nichyi, Aleksey Bolotnikov, and Ralph James "Characterization of laser epitaxial layers and heterostructures on the base of CdTe and Cd1-xMnxTe crystals", Proc. SPIE 11494, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXII, 114941E (20 August 2020); https://doi.org/10.1117/12.2569534
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KEYWORDS
Laser crystals

Crystals

Heterojunctions

Sensors

Laser therapeutics

Transparency

Electronics

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