Resist thickness dependence of line width roughness of chemically amplified resists used for electron beam lithography

Naoki Maeda; Akihiro Konda; Kazumasa Okamoto; Takahiro Kozawa; Takao Tamura

doi:10.1117/12.2574963

20 September 2020 Resist thickness dependence of line width roughness of chemically amplified resists used for electron beam lithography

Naoki Maeda, Akihiro Konda, Kazumasa Okamoto, Takahiro Kozawa, Takao Tamura

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Proceedings Volume 11518, Photomask Technology 2020; 115180D (2020) https://doi.org/10.1117/12.2574963
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only

Abstract

The transistors have been miniaturized to increase their integration. With the miniaturization, the thickness of resist has been decreased to prevent them from collapsing. In this study, the resist thickness dependence of the pattern formation of a chemically amplified electron beam resist was investigated. The line width roughness (LWR) of resist patterns increased with the decrease of initial resist film thickness. It was found that the dissolution kinetics depended on the initial resist film thickness. The escape of low-energy electrons to the substrates is considered to have resulted in the difference in the dissolution kinetics and LWR

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Naoki Maeda, Akihiro Konda, Kazumasa Okamoto, Takahiro Kozawa, and Takao Tamura "Resist thickness dependence of line width roughness of chemically amplified resists used for electron beam lithography", Proc. SPIE 11518, Photomask Technology 2020, 115180D (20 September 2020); https://doi.org/10.1117/12.2574963

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KEYWORDS

Line width roughness

Electron beam lithography

Chemically amplified resists

Photomasks

Electron beams

Scanning electron microscopy

Electronic components

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