Presentation
5 March 2021 Tunable third-harmonic generation using low-loss phase change chalcogenides
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Abstract
We demonstrate a new platform for reconfigurable third-order nonlinear photonic devices formed by silicon dioxide (SiO2)-Sb2S3(Sb2Se3)-SiO2 subwavelength Fabry-Perot cavities on a gold (Au) reflector, which exhibit giant third-harmonic generation (THG) modulations with enhanced efficiency. The use of the phase-change dichalcogenides (Sb2S3 or Sb2Se3) enables a wide tuning range of the THG response. The devices work at dispersion-engineered THG resonances at the crystalline phase (c-phase) of the PCC, which numerically exhibit c-phase THG flows a few 100 times more than those at the amorphous phase (a-phase) of the PCC at near-infrared excitation wavelengths.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Muliang Zhu, Sajjad Abdollahramezani, Omid Hemmatyar, and Ali Adibi "Tunable third-harmonic generation using low-loss phase change chalcogenides", Proc. SPIE 11694, Photonic and Phononic Properties of Engineered Nanostructures XI, 116941V (5 March 2021); https://doi.org/10.1117/12.2590709
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Chalcogenides

Third-harmonic generation

Silicon

Antimony

Near infrared

Phase shift keying

Nonlinear optics

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