Temperature dependent optical gain and absorption of InAs quantum dash laser on silicon emitting at 1.55 μm

Zhibo Li; Samuel Shutts; Ying Xue; Wei Luo; Kei May Lau; Peter M. Smowton

doi:10.1117/12.2582413

5 March 2021 Temperature dependent optical gain and absorption of InAs quantum dash laser on silicon emitting at 1.55 μm

Zhibo Li, Samuel Shutts, Ying Xue, Wei Luo, Kei May Lau, Peter M. Smowton

Author Affiliations +

Proceedings Volume 11705, Novel In-Plane Semiconductor Lasers XX; 117050L (2021) https://doi.org/10.1117/12.2582413
Event: SPIE OPTO, 2021, Online Only

Abstract

We report temperature dependent optical modal gain and absorption features as function of injection current of 1.55 μm InAs Q-Dash laser with an InAs/InAlGaAs/InP structure monolithically grown on (001) silicon substrate. Board-area multi-segmented contact devices were fabricated and driven by pulsed current. Net modal gain and absorption was obtained by measuring amplified spontaneous emission using the variable stripe-length method. From 20˚C to 80˚C, the changes in maximum gain and gain bandwidth were studied and a redshift in peak gain wavelength was observed. Quantum confined Stark effect was measured under reversed bias from -1 V to -7 V.

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Citation Download Citation

Zhibo Li, Samuel Shutts, Ying Xue, Wei Luo, Kei May Lau, and Peter M. Smowton "Temperature dependent optical gain and absorption of InAs quantum dash laser on silicon emitting at 1.55 μm", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 117050L (5 March 2021); https://doi.org/10.1117/12.2582413

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